Prof. Norio Tokuda’s group (Energy Saving Device Development Group) has successfully developed the world’s first inversion-type p-channel metal–oxide–semiconductor field-effect transistor (MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates
Prof. Norio Tokuda, Prof. Satoshi Yamasaki, Associate Prof. Tsubasa Matsumoto, Assistant Prof. Xufang Zhang, and Prof. Christoph E. Nebel in the Energy Saving Device Development Group, in collaboration with Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) and Fraunhofer-Institute for Applied Solid State Physics (IAF), have successfully fabricated the world’s first inversion-type p-channel metal–oxide–semiconductor field-effect transistor (MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates.
This team’s study has been published in “Carbon” recently.
Please see the following link for details:
https://www.sciencedirect.com/science/article/pii/S0008622320311519?via%3Dihub